データシートサーチシステム |
|
DRV8353M データシート(PDF) 27 Page - Texas Instruments |
|
|
DRV8353M データシート(HTML) 27 Page - Texas Instruments |
27 / 76 page The IDRIVE gate-drive current and TDRIVE gate-drive time should be initially selected based on the parameters of the external power MOSFET used in the system and the desired rise and fall times (see the Section 14 section). The high-side gate driver also implements a Zener clamp diode to help protect the external MOSFET gate from overvoltage conditions in the case of external short-circuit events on the MOSFET. INLx Control Inputs INHx Digital Core Level Shifters VCP 150 k VGS + GHx SHx VDRAIN Level Shifters VGLS 150 k VGS + GLx SLx/SPx ± ± Figure 13-13. Gate Driver Block Diagram 13.3.1.4.1 IDRIVE: MOSFET Slew-Rate Control The IDRIVE component implements adjustable gate-drive current to control the MOSFET VDS slew rates. The MOSFET VDS slew rates are a critical factor for optimizing radiated emissions, energy and duration of diode recovery spikes, dV/dt gate turnon leading to shoot-through, and switching voltage transients related to parasitics in the external half-bridge. IDRIVE operates on the principal that the MOSFET VDS slew rates are predominately determined by the rate of gate charge (or gate current) delivered during the MOSFET QGD or Miller charging region. By allowing the gate driver to adjust the gate current, it can effectively control the slew rate of the external power MOSFETs. IDRIVE allows the DRV8353M family of devices to dynamically switch between gate drive currents either through a register setting on SPI devices or the IDRIVE pin on hardware interface devices. The SPI devices provide 16 IDRIVE settings ranging between 50-mA to 1-A source and 100-mA to 2-A sink. Hardware interface devices provides 7 IDRIVE settings between the same ranges. The gate drive current setting is delivered to the gate during the turnon and turnoff of the external power MOSFET for the tDRIVE duration. After the MOSFET turnon or turnoff, the gate driver switches to a smaller hold IHOLD current to improve the gate driver efficiency. Additional details on the IDRIVE settings are described in the Section 13.6 section for the SPI devices and in the Section 13.3.3 section for the hardware interface devices. 13.3.1.4.2 TDRIVE: MOSFET Gate Drive Control The TDRIVE component is an integrated gate-drive state machine that provides automatic dead time insertion through switching handshaking, parasitic dV/dt gate turnon prevention, and MOSFET gate-fault detection. The first component of the TDRIVE state machine is automatic dead-time insertion. Dead time is period of time between the switching of the external high-side and low-side MOSFETs to make sure that they do not cross www.ti.com DRV8353M SLVSFO2 – JULY 2020 Copyright © 2020 Texas Instruments Incorporated Submit Document Feedback 27 Product Folder Links: DRV8353M |
同様の部品番号 - DRV8353M |
|
同様の説明 - DRV8353M |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |