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WSD4066DN データシート(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

部品番号. WSD4066DN
部品情報  Dual N-Ch MOSFET
ダウンロード  7 Pages
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メーカー  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
ホームページ  http://www.winsok.tw/index.html
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WSD4066DN Datasheet(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

   
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WSD4066DN
www.winsok.tw
Page 1
Dec.2014
Dual N-Ch MOSFET
General Description
Product Summery
The
WSD4066DN is the highest performance
trench Dual N-Ch MOSFET with extreme
high cell density,which provide excellent
RDSON and gate charge for most of the
synchronous buck converter applications .
The
WSD4066DN meet the RoHS and
Green Product requirement 100%
EAS guaranteed with full function
reliability approved.
Features
BVDSS
RDSON
ID
40V
17mΩ
14A
Applications
• High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
• Networking DC-DC Power System
• Load Switch
• Advanced high cell density Trench technology
• Super Low Gate Charge
• Excellent CdV/dt effect decline
• 100% EAS Guaranteed
• Green Device Available
Absolute Maximum Ratings
DFN3.3x3.3-8-EP Pin Configuration
Symbol
Parameter
Rating
Unit
Common Ratings
V
DSS
Drain-Source Voltage
40
V
VGSS
Gate-Source Voltage
±20
V
TJ
Maximum Junction Temperature
150
°C
TSTG
Storage Temperature Range
-55 to 150
°C
IS
Diode Continuous Forward Current
TA=25°C
2
A
ID
Continuous Drain Current
TA=25°C
14
A
TA=70°C
9.8
I
a
DM
Pulse Drain Current Tested
TA=25°C
28
A
PD
Maximum Power Dissipation
TA=25°C
2.5
W
TA=70°C
1.68
RJL
Thermal Resistance-Junction to Lead
Steady State
10
°C/W
RJA Thermal Resistance-Junction to Ambient
t
10s
42.5
°C/W
Steady State
b
75
I c
AS
Avalanche Current, Single pulse
L=0.5mH
10
A
E c
AS
Avalanche Energy, Single pulse
L=0.5mH
25
mJ
Note a:Pulse width limited by max. junction temperature.
Note b:Surface Mounted on 1in2 pad area, t =999sec.
Note c:UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
 


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