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WSD4066DN データシート(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

部品番号. WSD4066DN
部品情報  Dual N-Ch MOSFET
ダウンロード  7 Pages
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メーカー  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
ホームページ  http://www.winsok.tw/index.html
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WSD4066DN Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

   
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WSD4066DN
www.winsok.tw
Page 2
Dec.2014
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
VGS=0V, IDS=250A
40
-
-
V
IDSS
Zero Gate Voltage Drain Current
VDS=32V, VGS=0V
-
-
1
A
TJ=85°C
-
-
30
V
GS(th)
Gate Threshold Voltage
VDS=VGS, IDS=250A
1.0
1.5
2.0
V
I
GSS
Gate Leakage Current
VGS=±20V, VDS=0V
-
-
±100
nA
R
c
DS(ON)
Drain-Source On-state Resistance
VGS=10V, IDS=14A
-
14
17
m

VGS=4.5V, IDS=12 A
-
17
20
Diode Characteristics
V c
SD
Diode Forward Voltage
ISD=1A, VGS=0V
-
0.75
1.1
V
t
rr
Reverse Recovery Time
IDS=6A, dlSD /dt=100A/
s
-
13
-
ns
Q
rr
Reverse Recovery Charge
-
8.7
-
nC
Dynamic Characteristics
d
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
-
2.5
-
C
iss
Input Capacitance
VGS=0V,
VDS=20V,
Frequency=1.0MHz
-
815
-
pF
C
oss
Output Capacitance
-
95
-
C
rss
Reverse Transfer Capacitance
-
60
-
t
d(ON)
Turn-on Delay Time
VDD
=20V,
RL=20
, IDS=1A,
VGEN=10V, RG=6
-
7.8
-
ns
tr
Turn-on Rise Time
-
6.9
-
t
d( OFF)
Turn-off Delay Time
-
22.4
-
tf
Turn-off Fall Time
-
4.8
-
Gate Charge Characteristics
d
Qg
Total Gate Charge
VDS=20V, VGS=10V,
IDS=6A
-
15.7
22
nC
Qg
Total Gate Charge
VDS=20V, VGS=4.5V,
IDS=6A
-
7.5
10.5
Qgth
Threshold Gate Charge
-
1.85
-
Q
gs
Gate-Source Charge
-
3.24
-
Q
gd
Gate-Drain Charge
-
2.75
-
Note c:Pulse test ; pulse width
300
s, duty cycle2%.
Note d:Guaranteed by design, not subject to production testing.
Dual N-Ch MOSFET


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