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WSD4070DN データシート(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

部品番号. WSD4070DN
部品情報  N-Ch MOSFET
ダウンロード  7 Pages
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メーカー  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
ホームページ  http://www.winsok.tw/index.html
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WSD4070DN Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

   
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N-Ch MOSFET
WSD4070DN
Page 2
www.winsok.tw
Dec.2014
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
40
V
RDS(ON)
Static Drain-Source On-Resistance
2
---
4.5
5.5
m
Ω
VGS(th)
Gate Threshold Voltage
1.3
1.9
2.5
V
VGS(th)
VGS(th) Temperature Coefficient
VGS=VDS , ID =250uA
---
---
-6.
---
mV/℃
VDS=
40V , VGS=0V , TJ=25℃
--
-
---
-
2
IDSS
Drain-Source Leakage Current
VDS=
40V , VGS=0V , TJ=55℃
---
---
-
10
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
--
-
---
-
±
100
nA
gfs
gf
orwar Tr
d
ansconductance
VDS=5V , ID=
20A
---
67
---
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
0.8
1.5
Ω
Qg
Total Gate Charge (10V)
---
28
---
Qgs
Gate-Source Charge
---
3.9
---
Qgd
Gate-Drain Charge
VDS=20V, VGS=10V, IDS=20A
---
6.0
---
nC
Td(on)
Turn-On Delay Time
---
7.2
---
Tr
Rise Time
---
3.0
---
Td(off)
Turn-Off Dela T
y ime
---
23
---
Tf
T
Fall ime
---
3.5
---
ns
Ciss
Input Capacitance
---
2820
---
Coss
Output Capacitance
---
220
---
Crss
Reverse Transfer Capacitance
VDS=
20V , VGS=0V , f=1MHz
---
150
---
pF
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
VGS=10V , ID=7A
RDS(ON)
Static Drain-Source On-Resistance
2
---
5.3
7.6
VGS=4.5V , ID=5A
---
---
VDS=20V,
RL=1Ω ,
VGS=10V,
RG=3Ω.
S
A. The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C.


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