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WSD6056DN56 データシート(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

部品番号. WSD6056DN56
部品情報  Dual N-Ch MOSFET
ダウンロード  5 Pages
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メーカー  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
ホームページ  http://www.winsok.tw/index.html
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WSD6056DN56 Datasheet(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

   
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WSD6056DN56
www.winsok.tw
Page 1
Rev 1: May.2019
Dual N-Ch MOSFET
General Description
Product Summery
The WSD6056DN56 is the highest
performance trench Dual N-Ch MOSFET
with extreme high cell density,which provide
excellent RDSON and gate charge for
most of the synchronous buck converter
applications .
The WSD6056DN56 meet the
RoHS and Green Product
requirement 100% EAS guaranteed
with full function reliability approved.
Features
BVDSS
RDSON
ID
60V
16mΩ
45A
Applications
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Fast switching
Load Switch
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
Absolute Maximum Ratings
DFN
5X6C-8-EP2 Pin Configuration
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
Drain-Source Voltage
60
V
VGSS
Gate-Source Voltage
±20
V
TJ
Maximum Junction Temperature
150
°C
TSTG
Storage Temperature Range
-55 to 150
°C
IS
Diode Continuous Forward Current
Tc=25°C
45
A
ID
Continuous Drain Current
Tc=25°C
45
A
Tc=70°C
28.5
Pulse Drain Current Tested
Tc=25°C
180
A
PD
Maximum Power Dissipation
Tc=25°C
67
W
TC=70°C
45
RJL Thermal Resistance-Junction to Lead
Steady State
5
°C/W
RJA Thermal Resistance-Junction to Ambient
t 10s
45
°C/W
Steady State b
90
Avalanche Current, Single pulse
L=0.5mH
20
A
Avalanche Energy, Single pulse
L=0.5mH
20
mJ
Note a:Max. continuous current is limited by bonding wire.
Note b:Pulse width limited by max. junction temperature.
Note c:Surface mounted on 1in2 pad area, steady state t = 999s.
Note d:UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
EAS d
IAS d
IDM b


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