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WSD75100DN56 データシート(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

部品番号. WSD75100DN56
部品情報  N-Ch MOSFET
ダウンロード  7 Pages
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メーカー  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
ホームページ  http://www.winsok.tw/index.html
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WSD75100DN56 Datasheet(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

   
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Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
75
V
VGS
Gate-Source Voltage
±
25
V
ID
Continuous Drain Current, VGS=10V,TC=25°C
100
A
Continuous Drain Current, VGS=10V,TC=100°C
73
A
IDM
Pulsed Drain Curren
t ,TC=25°C
400
A
EAS
Avalanche Energy, Single pulse,L=0.5mH
155
W
RθJA
Thermal Resistance-Junction to Ambient ,t =10s ̀
62
W
PD
Maximum Power Dissipation,TC=25°C
Avalanche Current, Single pulse,L=0.5mH
30
A
225
BVDSS
RDSON
ID
75V
5.3mΩ
100A
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
General Description
Features
Applications
DC-DC converter switching for Networkong
General purpose switching
Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted)
DFN5X6-8 Pin Configuration
Product Summery
N-Ch MOSFET
WSD75100DN56
Page 1
www.winsok.tw
Dec.2014
The WSD75100DN56 is the highest performance
trench N-Ch MOSFET with extreme high cell
density , which provide excellent RDSON and gate
charge for most of the synchronous buck converter
applications .
The WSD75100DN56 meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
IAS
20
0.8
mJ
Maximum Power Dissipation,TC=100°C
Maximum Junction Temperature
150
°C
Storage Temperature Range
-55 to 150
°C
Diode Continuous Forward Current,TC=25°C
50
A
TJ
ID
IS
°C
Thermal Resistance-Junction to Ambient ,Steady State
60
Thermal Resistance-Junction to Case
RqJC
°C
°C


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