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WSD75100DN56 データシート(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

部品番号. WSD75100DN56
部品情報  N-Ch MOSFET
ダウンロード  7 Pages
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メーカー  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
ホームページ  http://www.winsok.tw/index.html
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WSD75100DN56 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

   
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background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
75
---
---
V
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.043
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
---
5.3
6.4
VGS(th)
Gate Threshold Voltage
2.0
3.0
4.0
V
VGS(th)
VGS(th) Temperature Coefficient
VGS=VDS , ID =250uA
---
-6.94
---
mV/℃
VDS=48V , VGS=0V , TJ=25℃
---
---
2
IDSS
Drain-Source Leakage Current
VDS=48V , VGS=0V , TJ=55℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=20A
---
50
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.0
2
Ω
Qg
Total Gate Charge (10V)
---
65
85
Qgs
Gate-Source Charge
---
20
---
Qgd
Gate-Drain Charge
VDS=20V , VGS=10V , ID=40A
---
17
---
nC
Td(on)
Turn-On Delay Time
---
27
49
Tr
Rise Time
---
14
26
Td(off)
Turn-Off Delay Time
---
60
108
Tf
Fall Time
VDD=30V , VGEN=10V , RG=1Ω,
ID=1A ,RL=15Ω.
---
37
67
ns
Ciss
Input Capacitance
3500
Coss
Output Capacitance
395
Crss
Reverse Transfer Capacitance
VDS=20V , VGS=0V , f=1MHz
195
pF
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy5
VDD=25V , L=0.5mH , IAS=30A
198
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current1,6
---
---
50
A
ISM
Pulsed Source Current2,6
VG=VD=0V , Force Current
---
---
100
A
VSD
Diode Forward Voltage2
VGS=0V , IS=20A , TJ=25℃
---
---
1.4
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t<10sec .
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.5mH,IAS=30A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
7.Package limitation current is 100A.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Guaranteed Avalanche Characteristics
Diode Characteristics
VGS=10V , ID=25A
N-Ch MOSFET
WSD75100DN56
Page 2
www.winsok.tw
Dec.2014
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