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WSD80100DN56 データシート(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

部品番号. WSD80100DN56
部品情報  N-Ch MOSFET
ダウンロード  5 Pages
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メーカー  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
ホームページ  http://www.winsok.tw/index.html
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WSD80100DN56 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

   
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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
80
---
---
V
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.043
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
---
6.1
8.5
VGS(th)
Gate Threshold Voltage
2.0
3.0
4.0
V
VGS(th)
VGS(th) Temperature Coefficient
VGS=VDS , ID =250uA
---
-6.94
---
mV/℃
VDS=48V , VGS=0V , TJ=25℃
---
---
2
IDSS
Drain-Source Leakage Current
VDS=48V , VGS=0V , TJ=55℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=20A
80
---
---
S
Qg
Total Gate Charge (10V)
---
125
---
Qgs
Gate-Source Charge
---
24
---
Qgd
Gate-Drain Charge
VDS=30V , VGS=10V , ID=30A
---
30
---
nC
Td(on)
Turn-On Delay Time
---
20
---
Tr
Rise Time
---
19
---
Td(off)
Turn-Off Delay Time
---
70
---
Tf
Fall Time
VDD=30V , VGS=10V ,
RG=2.5Ω, ID=2A ,RL=15Ω.
---
30
---
ns
Ciss
Input Capacitance
---
4900
---
Coss
Output Capacitance
---
410
---
Crss
Reverse Transfer Capacitance
VDS=25V , VGS=0V , f=1MHz
---
315
---
pF
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current1,6
---
---
105
A
ISM
Pulsed Source Current2,6
VG=VD=0V , Force Current
---
---
400
A
VSD
Diode Forward Voltage2
VGS=0V , IS=40A , TJ=25℃
---
---
1.4
V
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
VGS=10V , ID=40A
N-Ch MOSFET
WSD80100DN56
Page 2
www.winsok.tw
Rev1.0. Jun.2019
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4.
Guaranteed by design, not subject to production
5.
EAS condition:Tj=25℃,VDD=40V,VG=10V,L=0.5mH,Rg=25Ω


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