1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

NPN Silicon Planar

Epitaxial Transistor

This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer

applications. The device is housed in the SOT–223 package which is designed for

medium power surface mount applications.

• High Current: 2.0 Amp

• The SOT–223 package can be soldered using wave or reflow.

• SOT–223 package ensures level mounting, resulting in improved thermal

conduction, and allows visual inspection of soldered joints. The formed

leads absorb thermal stress during soldering, eliminating the possibility

of damage to the die.

• Available in 12 mm Tape and Reel

Use PZT651T1 to order the 7 inch/1000 unit reel

Use PZT651T3 to order the 13 inch/4000 unit reel

• PNP Complement is PZT751T1

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

60

Vdc

Collector–Base Voltage

VCBO

80

Vdc

Emitter–Base Voltage

VEBO

5.0

Vdc

Collector Current

IC

2.0

Adc

Total Power Dissipation @ TA = 25°C(1)

Derate above 25

°C

PD

0.8

6.4

Watts

mW/

°C

Storage Temperature Range

Tstg

– 65 to 150

°C

Junction Temperature

TJ

150

°C

DEVICE MARKING

651

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance from Junction–to–Ambient in Free Air

R

θJA

156

°C/W

Maximum Temperature for Soldering Purposes

Time in Solder Bath

TL

260

10

°C

Sec

1. Device mounted on a FR–4 glass epoxy printed circuit board using minimum recommended footprint.

Preferred devices are Motorola recommended choices for future use and best overall value.

Thermal Clad is a trademark of the Bergquist Company

Order this document

by PZT651T1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

© Motorola, Inc. 1996

PZT651T1

SOT–223 PACKAGE

HIGH CURRENT

NPN SILICON

TRANSISTOR

SURFACE MOUNT

Motorola Preferred Device

CASE 318E–04, STYLE 1

TO–261AA

1

2

3

4

COLLECTOR 2,4

BASE

1

EMITTER 3

REV 1