 |
データシートサーチシステム |
|
|
データシートサーチシステム |
|
PM503BA データシート(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
|
||||||||||||||||||||||||||||||
PM503BA Datasheet(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
|
|
1 / 8 page 
PM503BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS °C / W 1Pulse width limited by maximum junction temperature. 2The value of Rq JA is measured with the device mounted on 1in 2 FR-4 board with 2oz.Copper. PD Power Dissipation SYMBOL ±12 -2 A 160 °C V IDM TYPICAL -55 to 150 MAXIMUM 0.5 RqJA LIMITS UNITS 10 -1.5 VGS Operating Junction & Storage Temperature Range Tj, Tstg 0.7 W SYMBOL TA = 70 °C -2A ID RDS(ON) PARAMETERS/TEST CONDITIONS Gate-Source Voltage 115mΩ @V GS = -10V ID TA = 70 °C TA = 25 °C Pulsed Drain Current 1 -30V Continuous Drain Current THERMAL RESISTANCE TA = 25 °C Junction-to-Ambient 2 REV 1.0 1 2017/1/10 |
|
Japanese ▼ 
English
Chinese
German
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
