データシートサーチシステム |
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PKC16BB データシート(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PKC16BB データシート(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
1 / 8 page PKC16BB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 100% UIS Tested 100% Rg Tested PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on Rq JA t ≦10s value. Pulsed Drain Current 1 W VGS Gate-Source Voltage °C -55 to 150 TJ, Tstg PD A V 3.8 °C / W 32 51 ±20 SYMBOL Operating Junction & Storage Temperature Range SYMBOL 30 IAS 24.7 RqJC TC = 25 °C UNITS 120 32 TYPICAL VDS 30 V ID LIMITS 30.5 Avalanche Energy L =0.1mH RDS(ON) Drain-Source Voltage 7mΩ @V GS = 10V 51A ID TC = 25 °C TA = 70 °C 30V Continuous Drain Current TC = 100 °C PARAMETERS/TEST CONDITIONS THERMAL RESISTANCE TC = 100 °C Power Dissipation IDM 2.6 Junction-to-Ambient 2 t ≦10s Junction-to-Ambient 2 Continuous Drain Current TA = 25 °C mJ 13 RqJA PD W ID Avalanche Current EAS MAXIMUM 18 TA= 70 °C 14 Power Dissipation 3 TA = 25 °C 4.1 Steady-State Junction-to-Case Steady-State RqJA 54 REV 1.0 1 2017/1/13 |
同様の部品番号 - PKC16BB |
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同様の説明 - PKC16BB |
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