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データシートサーチシステム |
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データシートサーチシステム |
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PK664BA データシート(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PK664BA Datasheet(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PK664BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of Rq JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 51A. TA= 70 °C 18 Power Dissipation TA = 25 °C 2.4 Continuous Drain Current TA = 25 °C ID RqJA PD W 1.5 23 TC = 25 °C EAS TC = 100 °C Power Dissipation TJ, Tstg PD ±20 Pulsed Drain Current 1 115 TA = 70 °C 23 ID TC = 25 °C 30V Continuous Drain Current 3 TC = 100 °C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 2.4mΩ @V GS = 10V 114A Junction-to-Ambient 2 THERMAL RESISTANCE Avalanche Energy L =0.1mH Junction-to-Case RqJC MAXIMUM Avalanche Current IAS 48 W mJ UNITS 250 72 TYPICAL VDS 30 ID IDM SYMBOL LIMITS Operating Junction & Storage Temperature Range SYMBOL °C -55 to 150 51 VGS Gate-Source Voltage V A 2.1 °C / W 59 114 REV 1.1 1 2016/6/23 |
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