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データシートサーチシステム |
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データシートサーチシステム |
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PK650DY データシート(PDF) 3 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PK650DY Datasheet(HTML) 3 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PK650DY Dual N-Channel Enhancement Mode MOSFET Q2 3685 Q1 531 Q2 615 Q1 147 Q2 388 Q1 67 Q2 1 Q1 1 Q2 72 Q1 10 Q2 37 Q1 5.6 Q2 10 Q1 1.4 Q2 18 Q1 3 Q2 32 Q1 15 Q2 16 Q1 13 Q2 72 Q1 21 Q2 10 Q1 15 Q2 36 Q1 23 Q2 1 Q1 1.2 Q2 28 Q1 8.8 Q2 13 Q1 1.2 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current :Q1=29A,Q2=42A. Gate-Source Charge 2 DYNAMIC DYNAMIC Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz Total Gate Charge 2 Qg VGS=4.5V Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss td(on) Q2 VDS = 15V, ID @ 20A, VGS=10V, RGEN= 6Ω Q1 VDS = 15V , ID @ 10A, VGS = 10V, RGEN =6Ω nS Rise Time 2 pF Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Ω VGS=10V IS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) A Qgs Gate-Drain Charge 2 Qgd Q2 VDS = 15V , ID = 20A Q1 VDS = 15V , ID = 10A nC Turn-On Delay Time 2 IF = 10A, VGS = 0V V Reverse Recovery Time trr tr Turn-Off Delay Time 2 td(off) Fall Time 2 tf Continuous Current 3 Reverse Recovery Charge Qrr Q2 IF = 20A, dlF/dt = 100A /ms Q1 IF = 10A, dlF/dt = 100A /mS nS nC Forward Voltage 1 VSD IF = 20A, VGS = 0V REV 1.0 3 2017/1/5 |
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