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データシートサーチシステム |
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データシートサーチシステム |
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PK630HY データシート(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PK630HY Datasheet(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PK630HY Dual N-Channel Enhancement Mode MOSFET Q2 Q1 Q2 Q1 THERMAL RESISTANCE RATINGS CH. TYPICA L UNITS Q2 Q1 Q2 Q1 Q2 Q1 1Pulse width limited by maximum junction temperature T J(MAX)=150° C. 2The value of Rq JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.The value in any given application depends on the user's specific board design. 3Package limitation current :Q1=25A,Q2=25A. 4The Power dissipation is based on Rq JA t ≦10s value. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) MIN TYP MAX Q2 30 Q1 30 Q2 1.3 1.6 2.3 Q1 1.27 1.36 2.3 Q2 ±100 Q1 ±100 Q2 0.5 mA Q1 1 mA Q2 5 mA Q1 10 mA Q2 3.4 5.1 Q1 6.8 11 Q2 2.7 4.9 Q1 5.3 7.8 Q2 70 Q1 66 t ≦10s Junction-to-Ambient 2 Steady-State VGS = 0V, ID = 250mA VGS = 0V, ID = 1mA Forward Transconductance 1 gfs 2.6 5.2 °C / W 3.3 VGS = 10V, ID = 11A Gate-Body Leakage Zero Gate Voltage Drain Current IDSS V 56 2 40 VDS = 5V, ID = 20A VDS = 5V, ID = 11A S VGS = 10V, ID = 20A °C 72 UNITS VGS = 4.5V, ID = 11A VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V , TJ = 55 °C RqJA RqJC nA Gate Threshold Voltage SYMBOL THERMAL RESISTANCE Operating Junction & Storage Temperature Range PD RqJA VGS(th) TEST CONDITIONS TA = 70 °C TEST CONDITIONS TJ, TSTG LIMITS CH. Junction-to-Case Power Dissipation 4 30 W -55 to 150 MAXIMUM TA = 25 °C 4 STATIC 3.1 PARAMETER SYMBOL mΩ Drain-Source On-State Resistance 1 RDS(ON) VDS = VGS, ID = 250mA Drain-Source Breakdown Voltage V(BR)DSS IGSS VDS = 0V, VGS = ±20V VGS = 4.5V, ID = 16A REV 1.0 2 2017/1/3 |
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