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データシートサーチシステム |
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データシートサーチシステム |
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PK626HY データシート(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PK626HY Datasheet(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PK626HY Dual N-Channel Enhancement Mode MOSFET Q2 Q1 Q2 Q1 THERMAL RESISTANCE RATINGS CH. TYPICA L UNITS Q2 Q1 Q2 Q1 1Pulse width limited by maximum junction temperature T J(MAX)=150° C. 2The value of Rq JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.The value in any given application depends on the user's specific board design. 3Package limitation current :Q1=29A,Q2=34A. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) MIN TYP MAX Q2 30 Q1 30 Q2 1.3 1.75 2.3 Q1 1.3 1.75 2.3 Q2 ±100 Q1 ±100 Q2 0.5 mA Q1 1 mA Q2 5 mA Q1 10 mA Q2 2.3 3 Q1 7.4 9.5 Q2 1.9 2.4 Q1 5.6 7 Q2 70 Q1 50 VGS = 0V, ID = 1mA VGS = 0V, ID = 250mA VGS = 4.5V, ID = 11A VGS = 10V, ID = 20A UNITS V nA Forward Transconductance 1 gfs VDS = 5V, ID = 20A VDS = 5V, ID = 11A S SYMBOL THERMAL RESISTANCE Operating Junction & Storage Temperature Range PD MAXIMUM °C 1.7 2.7 Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V , TJ = 55 °C RqJA RqJC TEST CONDITIONS VGS(th) TEST CONDITIONS Gate Threshold Voltage Gate-Body Leakage 1.7 -55 to 150 TA = 70 °C Power Dissipation TA = 25 °C W TJ, TSTG 1.1 70 5.2 STATIC LIMITS CH. °C / W Junction-to-Case Junction-to-Ambient 2 VDS = 0V, VGS = ±20V VGS = 4.5V, ID = 15A 46 2.9 PARAMETER SYMBOL VGS = 10V, ID = 11A mΩ Drain-Source On-State Resistance 1 RDS(ON) VDS = VGS, ID = 250mA Drain-Source Breakdown Voltage V(BR)DSS IGSS REV 1.0 2 2017/1/5 |
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