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データシートサーチシステム |
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データシートサーチシステム |
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AOB10N60L データシート(PDF) 1 Page - VBsemi Electronics Co.,Ltd |
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AOB10N60L データシート(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
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1 / 10 page  N-Channel 650V (D-S) Power MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction power supplies (PFC) • Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 4.5 A. c. 1.6 mm from case. d. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C. PRODUCT SUMMARY VDS (V) at TJ max. 670 RDS(on) max. at 25 °C ( Ω)VGS = 10 V 0. Qg max. (nC) 41 Qgs (nC) 5 Qgd (nC) 22 Configuration Single N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 150 °C) VGS at 10 V TC = 25 °C ID 12 A TC = 100 °C 9.4 Pulsed Drain Current a IDM 45 Linear Derating Factor 3.5 W/°C Single Pulse Avalanche Energy b EAS 9 mJ Maximum Power Dissipation PD 156/34 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C Drain-Source Voltage Slope TJ = 125 °C dV/dt 15 V/ns Reverse Diode dV/dt d 4.1 Soldering Recommendations (Peak Temperature) c for 10 s 300 °C TO-220AB Top View GD S G D S TO-220 FULLPAK Top View 67 D2PAK (TO-263) G D S www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AOB10N60L 1 |
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