データシートサーチシステム
Selected language   Japanese  ▼

Delete All
ON OFF
ALLDATASHEET.JP

X  

Preview PDF Download HTML

AOB10N60L データシート(PDF) 1 Page - VBsemi Electronics Co.,Ltd

部品番号. AOB10N60L
部品情報  N-Channel 650V (D-S)Power MOSFET
ダウンロード  10 Pages
Scroll/Zoom Zoom In 100% Zoom Out
メーカー  VBSEMI [VBsemi Electronics Co.,Ltd]
ホームページ  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

AOB10N60L Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd

  AOB10N60L データシート HTML 1Page - VBsemi Electronics Co.,Ltd AOB10N60L データシート HTML 2Page - VBsemi Electronics Co.,Ltd AOB10N60L データシート HTML 3Page - VBsemi Electronics Co.,Ltd AOB10N60L データシート HTML 4Page - VBsemi Electronics Co.,Ltd AOB10N60L データシート HTML 5Page - VBsemi Electronics Co.,Ltd AOB10N60L データシート HTML 6Page - VBsemi Electronics Co.,Ltd AOB10N60L データシート HTML 7Page - VBsemi Electronics Co.,Ltd AOB10N60L データシート HTML 8Page - VBsemi Electronics Co.,Ltd AOB10N60L データシート HTML 9Page - VBsemi Electronics Co.,Ltd Next Button
Zoom Inzoom in Zoom Outzoom out
 1 / 10 page
background image
N-Channel 650V (D-S) Power MOSFET
FEATURES
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25
Ω, IAS = 4.5 A.
c. 1.6 mm from case.
d. ISD
≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
PRODUCT SUMMARY
VDS (V) at TJ max.
670
RDS(on) max. at 25 °C (
Ω)VGS = 10 V
0.
Qg max. (nC)
41
Qgs (nC)
5
Qgd (nC)
22
Configuration
Single
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
650
V
Gate-Source Voltage
VGS
± 30
Continuous Drain Current (TJ = 150 °C)
VGS at 10 V
TC = 25 °C
ID
12
A
TC = 100 °C
9.4
Pulsed Drain Current a
IDM
45
Linear Derating Factor
3.5
W/°C
Single Pulse Avalanche Energy b
EAS
9
mJ
Maximum Power Dissipation
PD
156/34
W
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to +150
°C
Drain-Source Voltage Slope
TJ = 125 °C
dV/dt
15
V/ns
Reverse Diode dV/dt d
4.1
Soldering Recommendations (Peak Temperature) c
for 10 s
300
°C
TO-220AB
Top View
GD S
G D S
TO-220 FULLPAK
Top View
67
D2PAK
(TO-263)
G
D
S
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
AOB10N60L
1


Html ページ

1  2  3  4  5  6  7  8  9  10 


Datasheet Download

Go To PDF Page


リンク URL



Privacy Policy
ALLDATASHEET.JP
ALLDATASHEETはお客様のビジネスに役立ちますか?  [ DONATE ] 

Alldatasheetは   |   広告   |   お問い合わせ   |   プライバシーポリシー   |   ブックマーク
   |   リンク交換   |   メーカーリスト
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn