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データシートサーチシステム |
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データシートサーチシステム |
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AOD2810 データシート(PDF) 4 Page - VBsemi Electronics Co.,Ltd |
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AOD2810 Datasheet(HTML) 4 Page - VBsemi Electronics Co.,Ltd |
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4 / 9 page 
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Safe Operating Area, Junction-to-Ambient 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = 25 °C - 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 T J - Temperature (°C) I D = 250 μA I D = 5 mA 0.000 0.010 0.020 0.030 0.040 0.050 0 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 20 A 0 100 200 300 400 500 0.001 0.01 0.1 1 10 Time (s) 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 100 ms Limited by R DS(on)* 1 ms I DM Limited T A = 25 °C Single Pulse BVDSS Limited 10 ms 10 s 1 s DC I D Limited 100 μs www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AOD2810 4 |
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