 |
データシートサーチシステム |
|
|
データシートサーチシステム |
|
AOD2810 データシート(PDF) 2 Page - VBsemi Electronics Co.,Ltd |
|
||||||||||||||||||||||||||||||
AOD2810 Datasheet(HTML) 2 Page - VBsemi Electronics Co.,Ltd |
|
|
2 / 9 page 
Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 80 V VDS Temperature Coefficient V DS/TJ ID = 250 μA 37 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ - 6.1 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.5 4.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 80 V, VGS = 0 V 1 μA VDS = 80 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V 30 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 20 A 0.0050 VGS = 6 V, ID = 15 A 0.0070 VGS = 5.0 V, ID = 10 A 0.0087 Forward Transconductancea gfs VDS = 10 V, ID = 20 A 60 S Dynamicb Input Capacitance Ciss VDS = 40 V, VGS = 0 V, f = 1 MHz 1855 pF Output Capacitance Coss 950 Reverse Transfer Capacitance Crss 76 Total Gate Charge Qg VDS = 40 V,VGS = 10 V, ID = 10 A 35.5 54 nC VDS = 40 V, VGS = 6 V, ID = 10 A 22 33 VDS = 40 V,VGS = 4.5 V, ID = 10 A 17.1 26 Gate-Source Charge Qgs 5.3 Gate-Drain Charge Qgd 7.3 Output Charge Qoss VDS = 40 V, VGS = 0 V 57 86 Gate Resistance Rg f = 1 MHz 0.5 1.3 2 Turn-On Delay Time td(on) VDD = 40 V, RL = 4 ID 10 A, VGEN = 10 V, Rg = 1 12 24 ns Rise Time tr 816 Turn-Off DelayTime td(off) 32 64 Fall Time tf 714 Turn-On Delay Time td(on) VDD = 40 V, RL = 4 ID 10 A, VGEN = 6.0 V, Rg = 1 14 28 Rise Time tr 11 22 Turn-Off DelayTime td(off) 30 60 Fall Time tf 816 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 75 A Pulse Diode Forward Current (t = 100 μs) ISM 150 Body Diode Voltage VSD IS = 5 A 0.76 1.1 V Body Diode Reverse Recovery Time trr IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C 38 75 ns Body Diode Reverse Recovery Charge Qrr 36 70 nC Reverse Recovery Fall Time ta 19 ns Reverse Recovery Rise Time tb 19 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AOD2810 2 |
|
Japanese ▼ 
English
Chinese
German
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
