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AOD2810 データシート(PDF) 2 Page - VBsemi Electronics Co.,Ltd

部品番号. AOD2810
部品情報  N-Channel 80 V (D-S) MOSFET
ダウンロード  9 Pages
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メーカー  VBSEMI [VBsemi Electronics Co.,Ltd]
ホームページ  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

AOD2810 Datasheet(HTML) 2 Page - VBsemi Electronics Co.,Ltd

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Notes
a. Pulse test; pulse width
 300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
80
V
VDS Temperature Coefficient
V
DS/TJ
ID = 250 μA
37
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
- 6.1
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
2.5
4.0
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 80 V, VGS = 0 V
1
μA
VDS = 80 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS  5 V, VGS = 10 V
30
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 20 A
0.0050
VGS = 6 V, ID = 15 A
0.0070
VGS = 5.0 V, ID = 10 A
0.0087
Forward Transconductancea
gfs
VDS = 10 V, ID = 20 A
60
S
Dynamicb
Input Capacitance
Ciss
VDS = 40 V, VGS = 0 V, f = 1 MHz
1855
pF
Output Capacitance
Coss
950
Reverse Transfer Capacitance
Crss
76
Total Gate Charge
Qg
VDS = 40 V,VGS = 10 V, ID = 10 A
35.5
54
nC
VDS = 40 V, VGS = 6 V, ID = 10 A
22
33
VDS = 40 V,VGS = 4.5 V, ID = 10 A
17.1
26
Gate-Source Charge
Qgs
5.3
Gate-Drain Charge
Qgd
7.3
Output Charge
Qoss
VDS = 40 V, VGS = 0 V
57
86
Gate Resistance
Rg
f = 1 MHz
0.5
1.3
2
Turn-On Delay Time
td(on)
VDD = 40 V, RL = 4 
ID  10 A, VGEN = 10 V, Rg = 1 
12
24
ns
Rise Time
tr
816
Turn-Off DelayTime
td(off)
32
64
Fall Time
tf
714
Turn-On Delay Time
td(on)
VDD = 40 V, RL = 4 
ID  10 A, VGEN = 6.0 V, Rg = 1 
14
28
Rise Time
tr
11
22
Turn-Off DelayTime
td(off)
30
60
Fall Time
tf
816
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
75
A
Pulse Diode Forward Current (t = 100 μs)
ISM
150
Body Diode Voltage
VSD
IS = 5 A
0.76
1.1
V
Body Diode Reverse Recovery Time
trr
IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C
38
75
ns
Body Diode Reverse Recovery Charge
Qrr
36
70
nC
Reverse Recovery Fall Time
ta
19
ns
Reverse Recovery Rise Time
tb
19
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
AOD2810
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