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データシートサーチシステム |
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AOD2810 データシート(PDF) 3 Page - VBsemi Electronics Co.,Ltd |
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AOD2810 Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd |
3 / 9 page ![]() TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 20 40 60 80 100 0.0 1.0 2.0 3.0 4.0 5.0 V DS - Drain-to-Source Voltage (V) V GS = 4 V V GS = 3 V V GS = 10 V thru 6 V V GS =5 V 0.0050 0.0070 0.0090 0.0110 0.0130 0.0150 0 20 40 60 80 100 I D - Drain Current (A) V GS =5.0 V V GS = 6.0 V V GS = 10 V 0 2 4 6 8 10 0 8 16 24 32 40 Q g - Total Gate Charge (nC) V DS = 40 V V DS = 60 V V DS = 20 V I D = 10 A 0 20 40 60 80 100 120 0.0 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) T C = 25 °C T C = 125 °C T C = - 55 °C 0 700 1400 2100 2800 3500 0 12 24 36 48 60 V DS - Drain-to-Source Voltage (V) C iss C oss C rss 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) I D = 20 A V GS = 10 V V GS = 4.5 V www.VBsemi.tw E-mail:China@VBsemi TEL:86-755-83251052 AOD2810 3 |
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