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データシートサーチシステム |
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データシートサーチシステム |
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AOD2908 データシート(PDF) 4 Page - VBsemi Electronics Co.,Ltd |
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AOD2908 Datasheet(HTML) 4 Page - VBsemi Electronics Co.,Ltd |
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4 / 8 page 
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted On-Resistance vs. Junction Temperature Avalanche Current vs. Time 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 175 VGS = 10 V ID = 30 A TJ -Junction Temperature (°C) tin (s) 1000 10 0.00001 0.001 0.1 1 0.1 0.01 IAV (A) at T A = 150 °C 100 1 0.0001 IAV (A) at T A = 25 °C Source-Drain Diode Forward Voltage TJ - Drain-Source Breakdown vs. Junction-Temperature 100 10 1 0.3 0.6 0.9 1.2 TJ = 25 °C TJ = 150 °C 0 VSD -Source-to-Drain Voltage (V) 90 100 110 120 130 140 - 50 - 25 0 25 50 75 100 125 150 175 TJ -Junction Temperature (°C) ID = 250 µA AOD2908 4 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 4 |
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