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AOD2916 データシート(PDF) 2 Page - VBsemi Electronics Co.,Ltd |
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AOD2916 データシート(HTML) 2 Page - VBsemi Electronics Co.,Ltd |
2 / 8 page Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VSS = 0 V, ID = 250 µA 100 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 13 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V , VGS = 0 V 1 µA VDS= 100 V, VGS = 0 V, TJ = 125 °C 50 VDS= 100 V, VGS = 0 V, TJ = 175 °C 250 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 75 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 5 A 0.0 30 Ω VGS = 4.5 V, ID = 3 A 0.0 VGS = 10 V, ID = 5 A, TJ = 125 °C 0.0 VGS = 10 V, ID = 3 A, TJ = 175 °C 0.0 67 Forward Transconductancea gfs VDS = 15 V, ID = 15 A 10 S Dynamicb Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz 2600 pF Output Capacitance Coss 290 Reverse Transfer Capacitance Crss 120 Total Gate Chargec Qg VDS = 50 V, VGS = 10 V, ID = 40 A 35 60 nC Gate-Source Chargec Qgs 11 Gate-Drain Chargec Qgd 9 Gate Resistance RG 1.7 Ω Turn-On Delay Timec td(on) VDD = 50 V, RL = 1.25 Ω ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω 11 20 ns Rise Timec tr 12 20 Turn-Off Delay Timec td(off) 30 45 Fall Timec tf 12 20 Source-Drain Diode Ratings and Characteristics TC = 25 °C b Continuous Current IS 40 A Pulsed Current ISM 120 Forward Voltagea VSD IF = 30 A, VGS = 0 V 1.0 1.5 V Reverse Recovery Time trr IF = 30 A, di/dt = 100 A/µs 60 100 ns Peak Reverse Recovery Current IRM(REC) 58 A Reverse Recovery Charge Qrr 0.15 0.4 µC 35 53 www.VBsemi.tw E-mail:China@VBsemi TEL:86-755-83251052 AOD2916 2 |
同様の部品番号 - AOD2916 |
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同様の説明 - AOD2916 |
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