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データシートサーチシステム |
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データシートサーチシステム |
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AOI402 データシート(PDF) 1 Page - VBsemi Electronics Co.,Ltd |
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AOI402 Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
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N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • DC/DC Conversion - System Power PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 30 0.07 at VGS = 10 V 53 19 nC 0.09 at VGS= 4.5 V 48 N-Channel MOSFET G D S Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 53 A TC = 70 °C 41 TA = 25 °C 14b, c TA = 70 °C 10 b, c Pulsed Drain Current IDM 165 Avalanche Current L = 0.1 mH IAS 25 Avalanche Energy EAS 40 mJ Continuous Source-Drain Diode Current TC = 25 °C IS 15 A TA = 25 °C 2.9b, c Maximum Power Dissipation TC = 25 °C PD 28 W TC = 70 °C 18 TA = 25 °C 3.5b, c TA = 70 °C 2.2b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient t ≤ 10 s RthJA 29 36 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 3.6 4.5 RoHS COMPLIANT TO-251 S D G Top View www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AOI402 1 |
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