2SA1512 datasheet(1/2 Pages) PANASONIC

部品番号	2SA1512

部品情報	Silicon PNP epitaxial planer type

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メーカー	PANASONIC [Panasonic Semiconductor]

ホームページ	http://www.panasonic.com/industrial/

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1

Transistor

2SA1512

Silicon PNP epitaxial planer type

For low-frequency output amplification

Complementary to 2SC1788

s Features

q

Low collector to emitter saturation voltage VCE(sat).

q

Optimum for low-voltage operation and for converters.

q

Allowing supply with the radial taping.

q

Optimum for high-density mounting.

s Absolute Maximum Ratings (Ta=25˚C)

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

–25

–20

–7

–1

– 0.5

300

150

–55 ~ +150

Unit

V

A

mW

˚C

s Electrical Characteristics (Ta=25˚C)

Parameter

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

ICBO

ICEO

VCBO

VCEO

VEBO

hFE1

*1

hFE2

VCE(sat)

VBE(sat)

fT

Cob

Conditions

VCB = –25V, IE = 0

VCE = –20V, IB = 0

IC = –10µA, IE = 0

IC = –1mA, IB = 0

IE = –10µA, IC = 0

VCE = –2V, IC = –0.5A

*2

VCE = –2V, IC = –1A

*2

IC = –500mA, IB = –50mA

*2

IC = –500mA, IB = –50mA

*2

VCB = –10V, IE = 50mA, f = 200MHz

VCB = –10V, IE = 0, f = 1MHz

min

–25

–20

–7

90

25

typ

150

15

max

–100

–1

220

– 0.4

–1.2

25

Unit

nA

µA

V

MHz

pF

*1h

FE1 Rank classification

Rank

Q

R

hFE1

90 ~ 155

130 ~ 220

1:Emitter

2:Collector

EIAJ:SC–72

3:Base

New S Type Package

4.0

±0.2

marking

2.54

±0.15

1.27

123

*2 Pulse measurement

同様の部品番号 - 2SA1512

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