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データシートサーチシステム |
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データシートサーチシステム |
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AM90N06-04D データシート(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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AM90N06-04D Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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2 / 4 page 
www.doingter.cn — 2 — Electrical Characteristics：(T C=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 60 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=60V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics 3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 --- 2.5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=20A --- 3 3.5 mΩ VGS=4.5V,ID=10A --- 3.5 4.5 Dynamic Characteristics 4 Ciss Input Capacitance VDS=25V, VGS=0V, f=100KHz --- 5377 --- pF Coss Output Capacitance --- 1666 --- Crss Reverse Transfer Capacitance --- 77.7 --- Switching Characteristics 4 td(on) Turn-On Delay Time VDD=30V,ID=25A,RG=2Ω VGS=10V --- 22.5 --- ns tr Rise Time --- 6.7 --- ns td(off) Turn-Off Delay Time --- 80.3 --- ns tf Fall Time --- 26.8 --- ns Qg Total Gate Charge VGS=10V, VDS=30V, ID=25A --- 66.1 --- nC Qgs Gate-Source Charge --- 10.7 --- nC Qgd Gate-Drain “Miller” Charge --- 10.9 --- nC Drain-Source Diode Characteristics Symbol Parameter Conditions Min Typ Max Units VSD Source-Drain Diode Forward Voltage VGS=0V,IS=20A --- --- 1.3 V AM90N06-04D |
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