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データシートサーチシステム |
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AM90N06-10P データシート(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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AM90N06-10P Datasheet(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
3 / 5 page ![]() www.doingter.cn — 3 — trr Reverse Recovery Time 36.3 --- Ns qrr Reverse Recovery Charge 1.4 --- nc Notes: Typical Characteristics: (T C=25℃ unless otherwise noted) IS=25 A, di/dt=100 A/μs 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) VDD=30 V, RG=50 Ω, L=0.3 mH, starting Tj=25 ℃. 5) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃. Figure 1, Typ. output characteristics Figure 2, Typ. transfer characteristics 0 2 4 6 8 10 0 50 100 150 200 Tj = 25 ℃ VGS= 10 V VGS= 7.5 V VGS= 6.5 V VGS= 6 V VGS= 5.5 V VGS= 5 V VGS= 4.5 V VGS= 4 V VGS= 3.5 V VDS, Drain-source voltage (V) 3.5 4 4.5 5 5.5 6 6.5 7.5 10 2 4 6 8 10 0.1 1 10 100 1000 V GS, Gate-source voltage(V) V DS= 10 V T j = 25 ℃ 10 20 30 40 50 60 100 101 102 103 104 f = 100 kHz V GS = 0 V V DS, Drain-source voltage (V) C iss C oss C rss 0 5 10 15 20 0 2 4 6 8 10 I D = 25 A V DS = 50 V Q g, Gate charge(nC) Figure 3, Typ. capacitances Figure 4, Typ. gate charge AM90N06-10P |
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