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データシートサーチシステム |
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データシートサーチシステム |
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AM90N06-10P データシート(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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AM90N06-10P Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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www.doingter.cn — 2 — Electrical Characteristics：(T C=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 60 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=60V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 --- 2.5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=20A --- 7.5 10 mΩ VGS=4.5V,ID=10A --- 10 13 Dynamic Characteristics Ciss Input Capacitance VDS=50V, VGS=0V, f=1MHz --- 1204 --- pF Coss Output Capacitance --- 194.1 --- Crss Reverse Transfer Capacitance --- 9.9 --- Switching Characteristics td(on) Turn-On Delay Time VDD=50V, ID=25A, VGS=10V,RGEN=3Ω --- 23.9 --- ns tr Rise Time --- 4.6 --- ns td(off) Turn-Off Delay Time --- 37.8 --- ns tf Fall Time --- 6.4 --- ns Qg Total Gate Charge VGS=10V, VDS=50V, ID=25A --- 17.9 --- nC Qgs Gate-Source Charge --- 3.8 --- nC Qgd Gate-Drain “Miller” Charge --- 4.2 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=20A --- --- 1.3 V Ls Continuous Source Current --- 68 A VGS<Vth AM90N06-10P |
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