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データシートサーチシステム |
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データシートサーチシステム |
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NTD4960N-35G データシート(PDF) 3 Page - VBsemi Electronics Co.,Ltd |
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NTD4960N-35G Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd |
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS =10thru 5 V VGS =3 V VGS =4 V 0.005 0.010 0.015 0.020 0.025 0 10203040 50 ID - Drain Current (A) VGS =10 V VGS =4.5 V 0 2 4 6 8 10 0.0 3.2 6.4 9.6 12.8 16.0 Qg - Total Gate Charge (nC) VDS =15 V VDS =10 V ID =10A VDS =20 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 02 4 6 8 VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C Crss 0 250 500 750 1000 1250 0 5 10 15 20 25 30 Ciss VDS - Drain-to-Source Voltage (V) Coss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 TJ -Junction Temperature (°C) VGS =4.5 V VGS =10 V ID =10A 10 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw NTD4960N-35G 3 |
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