AO4627 datasheet(4/8 Pages) DOINGTER

部品番号	AO4627

部品情報	N-Chanel and P-Channel MOSFET use advanced trench technology

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メーカー	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

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tf

Fall Time

---

9.5

---

ns

Qg

Total Gate Charge

VGS=-10V, VDS=-15V,

ID=-6A

---

18.5

---

nC

---

9.6

---

Qgs

Gate-Source

Charge

---

2.7

---

nC

Qgd

Gate-Drain “Miller” Charge

---

4.5

---

nC

Drain-Source Diode Characteristics

Qrr

Reverse Recovery Charge

---

8.8

---

NC

Trr

20

N-Typical Characteristics： (T

C=25℃ unless otherwise noted)

nC

---

IF=-6A

dI/dt=100A/μs

IF=-6A

dI/dt=100A/μs

Body Diode Reverse Recovery

Time

Notes:

A:The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a

still air environment with TA =25°C. The value in any a given application depends on the user's

specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C.The R θJA is the sum of the thermal impedance from junction to lead R θJL and lead to ambient.

D.The static characteristics in Figures 1 to 6,12,14 are obtained using 80 μs pulses, duty cycle 0.5%

max.

E.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still

air environment with TA=25°C. The SOA curve provides a single pulse rating.

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