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AO4627 データシート(PDF) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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AO4627 データシート(HTML) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
4 / 8 page www.doingter.cn — 4 — tf Fall Time --- 9.5 --- ns Qg Total Gate Charge VGS=-10V, VDS=-15V, ID=-6A --- 18.5 --- nC --- 9.6 --- Qgs Gate-Source Charge --- 2.7 --- nC Qgd Gate-Drain “Miller” Charge --- 4.5 --- nC Drain-Source Diode Characteristics Qrr Reverse Recovery Charge --- 8.8 --- NC Trr 20 N-Typical Characteristics: (T C=25℃ unless otherwise noted) nC --- --- IF=-6A dI/dt=100A/μs IF=-6A dI/dt=100A/μs Body Diode Reverse Recovery Time Notes: A:The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C.The R θJA is the sum of the thermal impedance from junction to lead R θJL and lead to ambient. D.The static characteristics in Figures 1 to 6,12,14 are obtained using 80 μs pulses, duty cycle 0.5% max. E.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. AO4627 |
同様の部品番号 - AO4627 |
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同様の説明 - AO4627 |
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