AOD5N50 datasheet(4/5 Pages) DOINGTER

部品番号	AOD5N50

部品情報	N-Channel MOSFET uses advanced trench technology

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メーカー	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

ホームページ	http://www.doingter.cn/

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4 —

0

5

10

15

20

0

2

4

6

8

10

12

V

DS = 250V

V

DS = 100V

V

DS = 400V

※ Note : I

D = 5A

Q

G, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

10

-1

10

0

10

1

0

200

400

600

800

1000

1200

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

※ Notes ;

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs Case Temperature

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

※Notes:

1. V

GS = 0 V

2. I

D = 250

μ A

T

J, Junction Temperature [

o

C]

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes :

1. V

GS = 10 V

2. I

D = 2 A

T

J, Junction Temperature [

o

C]

10

0

10

1

10

2

10

3

10

-2

10

-1

10

0

10

1

10

2

100 ms

1 ms

10

µs

DC

10 ms

100

µs

Operation in This Area

is Limited by R

DS(on)

※ Notes :

1. T

C = 25

o

C

2. T

J = 150

o

C

3. Single Pulse

V

DS, Drain-Source Voltage [V]

25

50

75

100

125

150

0

1

2

3

4

5

T

C, Case Temperature [

℃]

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

AOD5N50

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