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データシートサーチシステム |
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データシートサーチシステム |
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AOD5N50 データシート(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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AOD5N50 Datasheet(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=500V,ID=4A,RDS(ON)<1.4Ω@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(T C=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±30 V ID Continuous Drain Current-TC=25℃ 4 A Continuous Drain Current-TC=100℃ 2.4 Pulsed Drain Current 1 16 EAS Single Pulse Avalanche Energy 1 300 mJ PD Power Dissipation, TC=25℃ 2.5 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 2.6 ℃/W RƟJA Thermal Resistance,Junction to Ambient 50* D S G * When mounted on the minimum pad size recommended (PCB Mount) AOD5N50 |
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