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データシートサーチシステム |
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データシートサーチシステム |
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AOD5N50 データシート(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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AOD5N50 Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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2 / 5 page 
www.doingter.cn — 2 — Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 500 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=500V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 --- 4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=2A --- 1.14 1.4 mΩ VGS=4.5V,ID=0A --- --- --- GFS Forward Transconductance 4 VDS=40V, ID=2A --- 5.2 --- S Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 480 625 pF Coss Output Capacitance --- 80 105 Crss Reverse Transfer Capacitance --- 15 20 Switching Characteristics 4.5 td(on) Turn-On Delay Time VDD=250V, ID=5A, VGS=10V,RGEN=25Ω --- 12 35 ns tr Rise Time --- 46 100 ns td(off) Turn-Off Delay Time --- 50 110 ns tf Fall Time --- 48 105 ns Qg Total Gate Charge VGS=10V, VDS=400V, ID=5A --- 18 24 nC Qgs Gate-Source Charge --- 2.2 --- nC Qgd Gate-Drain “Miller” Charge --- 9.7 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=1A --- --- 1.4 V AOD5N50 Electrical Characteristics：(T C=25℃ unless otherwise noted) |
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