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AOD5T40P データシート(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

部品番号. AOD5T40P
部品情報  N-Channel MOSFET uses advanced trench technology
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メーカー  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
ホームページ  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

AOD5T40P Datasheet(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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3
Ls
Continuous Source Current
---
80
A
lsm
Pulsed Source Current
---
160
A
trr
Reverse Recovery Time
3
14
---
Ns
qrr
Reverse Recovery Charge
3
5
---
nc
Notes:
Typical Characteristics: (T
C=25unless otherwise noted)
S=6A,VGS =0V
diF/dt=100A/μs (Note3)
---
1, L=17.9mH, IAS=5.5A, VDD=50V, RG=25Ω, Starting TJ =25°C 
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
4, Essentially Independent of Operating Temperature 
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-1
10
0
10
1
150℃
※ Notes :
1. V
GS = 0V
2. 250μ s Pulse Test
25℃
V
SD, Source-Drain voltage [V]
0
5
10
15
20
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
GS = 20V
V
GS = 10V
※ Note : T
J = 25
I
D, Drain Current [A]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
※ Notes :
1. 250μ s Pulse Test
2. T
C = 25
V
DS, Drain-Source Voltage [V]
246
8
10
10
-1
10
0
10
1
150
oC
25
oC
-55
oC
※ Notes :
1. V
DS = 40V
2. 250μ s Pulse Test
V
GS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
AOD5T40P


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