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データシートサーチシステム |
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データシートサーチシステム |
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AOD5T40P データシート(PDF) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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AOD5T40P Datasheet(HTML) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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www.doingter.cn — 4 — Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 10 -1 10 0 10 1 0 200 400 600 800 1000 1200 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Note; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 0 5 10 15 20 0 2 4 6 8 10 12 V DS = 200V V DS = 80V V DS = 320V ※ Note : I D = 6A Q G, Total Gate Charge [nC] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 µs DC 10 ms 100 µs Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse V DS, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※Notes: 1. V GS = 0 V 2. I D = 250 μ A T J , Junction Temperature [ o C] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ※ Notes : 1. V GS = 10 V 2. I D = 3 A T J, Junction Temperature [ o C] 25 50 75 100 125 150 0 1 2 3 4 5 6 T C, Case Temperature [ ℃] AOD5T40P |
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