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データシートサーチシステム |
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データシートサーチシステム |
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AOD5T40P データシート(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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AOD5T40P Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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2 / 5 page 
www.doingter.cn — 2 — Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 400 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=400V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 --- 4 V RDS(ON) Drain-Source On Resistance 2 VGS=10V,ID=3A --- --- 1000 mΩ VGS=4.5V,ID=0A --- --- --- GFS Forward Transconductance VDS=10V, ID=0A --- --- --- S Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 480 610 pF Coss Output Capacitance --- 80 105 Crss Reverse Transfer Capacitance --- 15 20 Switching Characteristics 3.4 td(on) Turn-On Delay Time VDD=200V, ID=6A, VGS=10V,RGEN=25Ω --- --- 35 ns tr Rise Time --- --- 140 ns td(off) Turn-Off Delay Time --- --- 5 ns tf Fall Time --- --- 85 ns Qg Total Gate Charge VGS=10V, VDS=320V, ID=6A --- --- 20 nC Qgs Gate-Source Charge --- .3 --- nC Qgd Gate-Drain “Miller” Charge --- 6.4 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=5.5A --- --- 1 V AOD5T40P Electrical Characteristics：(T C=25℃ unless otherwise noted) |
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