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AOD7N65 データシート(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

部品番号. AOD7N65
部品情報  N-Channel MOSFET uses advanced trench technology
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メーカー  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
ホームページ  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

AOD7N65 Datasheet(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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3
Qgd
Gate-Drain “Miller” Charge
---
4.1
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
VGS=0V,IS=7A
---
---
1.2
V
Is
Continuous Source Current
---
---
---
7
A
lsm
Pulsed Source Current
---
--
28
Ns
trr
---
389
---
ns
Qrr
---
2.04
---
Notes:
Typical Characteristics: (T
C=25unless otherwise noted)
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 10 mH, IAS = 7 A, VDD = 50V, RG = 25
Ω, Starting TJ = 25°C
3. ISD≤4A, di/dt ≤200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Reverse Recovery Time
Reverse Recovery Charge
V
GS = 0 V, IS = 7 A,
dI
F / dt = 100 A/μs
4
μC
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
AOD7N65


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