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データシートサーチシステム |
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データシートサーチシステム |
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AOD7N65 データシート(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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AOD7N65 Datasheet(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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Repetitive Avalanche Energy Avalanche Current www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=650V,ID=8A,RDS(ON)<1.4Ω@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(T C=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Continuous Drain Current-TC=25℃ 8 A Continuous Drain Current-TC=100℃ 4.4 IDM Pulsed Drain Current 1 28 EAS Single Pulse Avalanche Energy 2 247 mJ IAR 7 A PD Power Dissipation, TC=25℃ 32.9 W EAR 18 mJ Dv/dt 5 V/ns TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： D S G 1 1 Peak Diode Recovery dv/dt 3 AOD7N65 |
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