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データシートサーチシステム |
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データシートサーチシステム |
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P50N06 データシート(PDF) 1 Page - VBsemi Electronics Co.,Ltd |
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P50N06 Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
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FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t 10 s. PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) a 60 0.0 11 at V GS = 10 V 60 0.01 2 at V GS = 4.5 V 50 N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C) b TC = 25 °C ID 60 A TC = 100 °C 50a Pulsed Drain Current IDM 200 Continuous Source Current (Diode Conduction) IS 50a Avalanche Current IAS 50 Single Avalanche Energy (Duty Cycle 1 %) L = 0.1 mH EAS 125 mJ Maximum Power Dissipation TC = 25 °C PD 136 W TA = 25 °C 3b, 8.3b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t 10 sec RthJA 15 18 °C/W Steady State 40 50 Maximum Junction-to-Case RthJC 0.85 1.1 N-Channel 60-V (D-S) MOSFET TO-220AB G D S www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 P50N06 1 |
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