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データシートサーチシステム |
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データシートサーチシステム |
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P50N06 データシート(PDF) 3 Page - VBsemi Electronics Co.,Ltd |
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P50N06 Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd |
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TYPICAL CHARACTERISTICS (25 °C unless noted) Output Characteristics Transconductance Capacitance 0 40 80 120 160 200 0 2468 10 VDS - Drain-to-Source Voltage (V) VGS = 10 thru 5 V 2 V, 3 V 4 V 0 20 40 60 80 100 120 0 10203040 50 TC = - 55 °C 25 °C 125 °C ID - Drain Current (A) 0 600 1200 1800 2400 3000 3600 4200 4800 0 102030 4050 60 VDS - Drain-to-Source Voltage (V) Crss Ciss Coss Transfer Characteristics On-Resistance vs. Drain Current Gate Charge 0 20 40 60 80 100 0 1234 5 VGS - Gate-to-Source Voltage (V) 25 °C - 55 °C TC = 125 °C 0.000 0.004 0.008 0.012 0.016 0.020 0 20406080 100 ID - Drain Current (A) VGS = 4.5 V VGS = 10 V 0 2 4 6 8 10 0 10203040 50 Qg - Total Gate Charge (nC) VDS = 30 V ID = 50 A www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 P50N06 3 |
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