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P50N06PA データシート(PDF) 1 Page - VBsemi Electronics Co.,Ltd

部品番号. P50N06PA
部品情報  N-Channel 60-V (D-S) MOSFET
ダウンロード  7 Pages
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メーカー  VBSEMI [VBsemi Electronics Co.,Ltd]
ホームページ  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

P50N06PA Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd

  P50N06PA データシート HTML 1Page - VBsemi Electronics Co.,Ltd P50N06PA データシート HTML 2Page - VBsemi Electronics Co.,Ltd P50N06PA データシート HTML 3Page - VBsemi Electronics Co.,Ltd P50N06PA データシート HTML 4Page - VBsemi Electronics Co.,Ltd P50N06PA データシート HTML 5Page - VBsemi Electronics Co.,Ltd P50N06PA データシート HTML 6Page - VBsemi Electronics Co.,Ltd P50N06PA データシート HTML 7Page - VBsemi Electronics Co.,Ltd  
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FEATURES
175 °C Junction Temperature
TrenchFET® Power MOSFET
Material categorization:
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t
 10 s.
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A)
a
60
0.0
11 at V
GS = 10 V
60
0.01
2 at V
GS = 4.5 V
50
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current (TJ = 175 °C)
b
TC = 25 °C
ID
60
A
TC = 100 °C
50a
Pulsed Drain Current
IDM
200
Continuous Source Current (Diode Conduction)
IS
50a
Avalanche Current
IAS
50
Single Avalanche Energy (Duty Cycle
 1 %)
L = 0.1 mH
EAS
125
mJ
Maximum Power Dissipation
TC = 25 °C
PD
136
W
TA = 25 °C
3b, 8.3b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t
 10 sec
RthJA
15
18
°C/W
Steady State
40
50
Maximum Junction-to-Case
RthJC
0.85
1.1
N-Channel 60-V (D-S) MOSFET
TO-220AB
G
D
S
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
P50N06PA
1


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