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データシートサーチシステム |
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データシートサーチシステム |
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P50N06PA データシート(PDF) 2 Page - VBsemi Electronics Co.,Ltd |
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P50N06PA Datasheet(HTML) 2 Page - VBsemi Electronics Co.,Ltd |
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2 / 7 page 
Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1 3 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 µA VDS = 60 V, VGS = 0 V, TJ = 125 °C 50 VDS = 60 V, VGS = 0 V, TJ = 175 °C 250 On-State Drain Currentb ID(on) VDS =5 V, VGS = 10 V 60 A Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 20 A 0.0 11 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.014 VGS = 10 V, ID = 20 A, TJ = 175 °C 0.018 VGS = 4.5 V, ID = 15 A 0.01 2 Forward Transconductanceb gfs VDS = 15 V, ID = 20 A 60 S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz 3650 pF Output Capacitance Coss 570 Reverse Transfer Capacitance Crss 325 Total Gate Chargec Qg VDS = 30 V, VGS = 10 V, ID = 50 A 47 nC Gate-Source Chargec Qgs 10 Gate-Drain Chargec Qgd 12 Turn-On Delay Timec td(on) VDD = 30 V, RL = 0.6 ID 50 A, VGEN = 10 V, Rg = 2.5 10 20 ns Rise Timec tr 15 25 Turn-Off Delay Timec td(off) 35 50 Fall Timec tf 20 30 Source-Drain Diode Ratings and Characteristics (TC = 25 °C) Pulsed Current ISM 60 A Diode Forward Voltage VSD IF = 20 A, VGS = 0 V 11.5 V Reverse Recovery Time trr IF = 20 A, di/dt = 100 A/µs 45 100 ns www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 P50N06PA 2 |
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