データシートサーチシステム
Selected language   Japanese  ▼

Delete All
ON OFF
ALLDATASHEET.JP

X  

Preview PDF Download HTML

P55NF06 データシート(PDF) 2 Page - VBsemi Electronics Co.,Ltd

部品番号. P55NF06
部品情報  N-Channel 60-V (D-S) MOSFET
ダウンロード  7 Pages
Scroll/Zoom Zoom In 100% Zoom Out
メーカー  VBSEMI [VBsemi Electronics Co.,Ltd]
ホームページ  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

P55NF06 Datasheet(HTML) 2 Page - VBsemi Electronics Co.,Ltd

  P55NF06 データシート HTML 1Page - VBsemi Electronics Co.,Ltd P55NF06 データシート HTML 2Page - VBsemi Electronics Co.,Ltd P55NF06 データシート HTML 3Page - VBsemi Electronics Co.,Ltd P55NF06 データシート HTML 4Page - VBsemi Electronics Co.,Ltd P55NF06 データシート HTML 5Page - VBsemi Electronics Co.,Ltd P55NF06 データシート HTML 6Page - VBsemi Electronics Co.,Ltd P55NF06 データシート HTML 7Page - VBsemi Electronics Co.,Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width
 300 µs, duty cycle  2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
60
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
1
3
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
1
µA
VDS = 60 V, VGS = 0 V, TJ = 125 °C
50
VDS = 60 V, VGS = 0 V, TJ = 175 °C
250
On-State Drain Currentb
ID(on)
VDS =5 V, VGS = 10 V
60
A
Drain-Source On-State Resistanceb
RDS(on)
VGS = 10 V, ID = 20 A
0.0
11
VGS = 10 V, ID = 20 A, TJ = 125 °C
0.014
VGS = 10 V, ID = 20 A, TJ = 175 °C
0.018
VGS = 4.5 V, ID = 15 A
0.01
2
Forward Transconductanceb
gfs
VDS = 15 V, ID = 20 A
60
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V, VDS = 25 V, f = 1 MHz
3650
pF
Output Capacitance
Coss
570
Reverse Transfer Capacitance
Crss
325
Total Gate Chargec
Qg
VDS = 30 V, VGS = 10 V, ID = 50 A
47
nC
Gate-Source Chargec
Qgs
10
Gate-Drain Chargec
Qgd
12
Turn-On Delay Timec
td(on)
VDD = 30 V, RL = 0.6 
ID  50 A, VGEN = 10 V, Rg = 2.5 
10
20
ns
Rise Timec
tr
15
25
Turn-Off Delay Timec
td(off)
35
50
Fall Timec
tf
20
30
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)
Pulsed Current
ISM
60
A
Diode Forward Voltage
VSD
IF = 20 A, VGS = 0 V
11.5
V
Reverse Recovery Time
trr
IF = 20 A, di/dt = 100 A/µs
45
100
ns
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
P55NF06
2


Html ページ

1  2  3  4  5  6  7 


Datasheet Download

Go To PDF Page


リンク URL



Privacy Policy
ALLDATASHEET.JP
ALLDATASHEETはお客様のビジネスに役立ちますか?  [ DONATE ] 

Alldatasheetは   |   広告   |   お問い合わせ   |   プライバシーポリシー   |   ブックマーク
   |   リンク交換   |   メーカーリスト
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn