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データシートサーチシステム |
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データシートサーチシステム |
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P0460AD データシート(PDF) 4 Page - VBsemi Electronics Co.,Ltd |
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P0460AD Datasheet(HTML) 4 Page - VBsemi Electronics Co.,Ltd |
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4 / 9 page 
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 0 400 800 1200 1600 2000 1 10 100 1000 DS V , Drain-to-Source Voltage (V) A V = 0V, f = 1MHz C = C + C , C SHORTED C = C C = C + C GS iss gs gd ds rss gd oss ds gd iss oss rss 0 10 20 30 40 50 0 4 8 12 16 20 Q , Total Gate Charge (nC) G FOR TEST CIRCUIT SEE FIGURE I = D 13 3.2 A V = 130V DS V = 325V DS V = 520V DS 0.1 1 5 10 0.2 0.4 0.6 0.8 1.0 1.2 V ,Source-to-Drain Voltage (V) SD V = 0 V GS T = 25 C J ° T = 150 C J ° 0.1 1 5 10 10 100 1000 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 150 C = 25 C ° ° J C V , Drain-to-Source Voltage (V) DS 10us 100us 1ms 10ms E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw P0460AD 4 |
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