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データシートサーチシステム |
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データシートサーチシステム |
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P1004BS データシート(PDF) 4 Page - VBsemi Electronics Co.,Ltd |
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P1004BS Datasheet(HTML) 4 Page - VBsemi Electronics Co.,Ltd |
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4 / 9 page 
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Source Drain Diode Forward Voltage Threshold Voltage Drain Source Breakdown vs. Junction Temperature Current De-Rating 10 100 1000 10000 0.5 0.8 1.1 1.4 1.7 2.0 -50 -25 0 255075 100 125 150 175 Axis Title T J - Junction Temperature (°C) 2nd line I D = 30 A V GS = 10 V V GS = 4.5 V 10 100 1000 10000 0 0.01 0.02 0.03 0.04 0.05 2468 10 Axis Title V GS - Gate-to-Source Voltage (V) 2nd line T J = 25 °C T J = 125 °C 10 100 1000 10000 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 Axis Title V SD - Source-to-Drain Voltage (V) 2nd line T J = 150 °C T J = 25 °C 10 100 1000 10000 -2.0 -1.4 -0.8 -0.2 0.4 1.0 -50 -25 0 25 50 75 100 125 150 175 Axis Title T J - Temperature (°C) 2nd line I D = 5 mA I D = 250 μA 10 100 1000 10000 105 110 115 120 125 -50 -25 0 25 50 75 100 125 150 175 Axis Title T J - Temperature (°C) 2nd line I D = 250 μA 10 100 1000 10000 0 30 60 90 120 150 025 50 75 100 125 150 175 Axis Title T C - Case Temperature (°C) 2nd line E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw P1004BS 4 |
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