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P1004BS データシート(PDF) 2 Page - VBsemi Electronics Co.,Ltd

部品番号. P1004BS
部品情報  N-Channel 40 V (D-S) MOSFET
ダウンロード  9 Pages
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メーカー  VBSEMI [VBsemi Electronics Co.,Ltd]
ホームページ  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

P1004BS Datasheet(HTML) 2 Page - VBsemi Electronics Co.,Ltd

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Notes
a. Pulse test; pulse width
 300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
40
-
-
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
1
-
3
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
-
-
1
μA
VDS = 40 V, VGS = 0 V, TJ = 125 °C
-
-
100
VDS = 40 V, VGS = 0 V, TJ = 175 °C
-
-
2
mA
On-State Drain Current a
ID(on)
VDS  10 V, VGS = 10 V
90
-
-
A
Drain-Source On-State Resistance a
RDS(on)
VGS = 10 V, ID = 30 A
-
0.005
-
VGS = 4.5 V, ID = 30 A
-
0.006
-
Forward Transconductance a
gfs
VDS = 15 V, ID = 30 A
-
85
-
S
Dynamic b
Input Capacitance
Ciss
VGS = 0 V, VDS = 20 V, f = 1 MHz
-
3330
-
pF
Output Capacitance
Coss
-
1395
-
Reverse Transfer Capacitance
Crss
-95-
Total Gate Charge c
Qg
VDS =20 V, V GS = 10 V, ID = 30 A
-
53.5
81
nC
Gate-Source Charge c
Qgs
-
14.5
-
Gate-Drain Charge c
Qgd
-
13.2
-
Gate Resistance
Rg
f = 1 MHz
0.9
1.9
3.8
Turn-On Delay Time c
td(on)
VDD = 20 V, RL = 1.67 
ID  30 A, VGEN = 10 V, Rg = 1 
-13
26
ns
Rise Time c
tr
-22
44
Turn-Off Delay Time c
td(off)
-27
54
Fall Time c
tf
-9
18
Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C)
Pulsed Current (t = 100 μs)
ISM
-
Forward Voltage a
VSD
IF = 30 A, VGS = 0 V
-
0.86
1.4
V
Reverse Recovery Time
trr
IF = 30 A, di/dt = 100 A/μs
-
88
176
ns
Peak Reverse Recovery Charge
IRM(REC)
-5
10
A
Reverse Recovery Charge
Qrr
-
0.22
0.44
μC
220
-
-
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
P1004BS
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