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データシートサーチシステム |
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データシートサーチシステム |
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P1004BS データシート(PDF) 2 Page - VBsemi Electronics Co.,Ltd |
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P1004BS Datasheet(HTML) 2 Page - VBsemi Electronics Co.,Ltd |
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2 / 9 page 
Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 40 - - V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1 - 3 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V - - 1 μA VDS = 40 V, VGS = 0 V, TJ = 125 °C - - 100 VDS = 40 V, VGS = 0 V, TJ = 175 °C - - 2 mA On-State Drain Current a ID(on) VDS 10 V, VGS = 10 V 90 - - A Drain-Source On-State Resistance a RDS(on) VGS = 10 V, ID = 30 A - 0.005 - VGS = 4.5 V, ID = 30 A - 0.006 - Forward Transconductance a gfs VDS = 15 V, ID = 30 A - 85 - S Dynamic b Input Capacitance Ciss VGS = 0 V, VDS = 20 V, f = 1 MHz - 3330 - pF Output Capacitance Coss - 1395 - Reverse Transfer Capacitance Crss -95- Total Gate Charge c Qg VDS =20 V, V GS = 10 V, ID = 30 A - 53.5 81 nC Gate-Source Charge c Qgs - 14.5 - Gate-Drain Charge c Qgd - 13.2 - Gate Resistance Rg f = 1 MHz 0.9 1.9 3.8 Turn-On Delay Time c td(on) VDD = 20 V, RL = 1.67 ID 30 A, VGEN = 10 V, Rg = 1 -13 26 ns Rise Time c tr -22 44 Turn-Off Delay Time c td(off) -27 54 Fall Time c tf -9 18 Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C) Pulsed Current (t = 100 μs) ISM - Forward Voltage a VSD IF = 30 A, VGS = 0 V - 0.86 1.4 V Reverse Recovery Time trr IF = 30 A, di/dt = 100 A/μs - 88 176 ns Peak Reverse Recovery Charge IRM(REC) -5 10 A Reverse Recovery Charge Qrr - 0.22 0.44 μC 220 - - E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw P1004BS 2 |
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