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データシートサーチシステム |
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データシートサーチシステム |
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P4410LVG データシート(PDF) 4 Page - VBsemi Electronics Co.,Ltd |
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P4410LVG Datasheet(HTML) 4 Page - VBsemi Electronics Co.,Ltd |
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4 / 8 page 
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Capacitance On-Resistance vs. Junction Temperature 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = 25 °C 0 250 500 750 1000 1250 0 20 40 60 80 100 V DS - Drain-to-Source Voltage (V) C iss C oss C rss 0.45 0.9 1.35 1.8 2.25 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) V GS = 4.5 V, I D = 6 A VGS = 10 V, ID = 6.6 A Threshold Voltage Drain Source Breakdown vs. Junction Temperature Current Derating 1.2 1.5 1.8 2.1 2.4 2.7 - 50 - 25 0 25 50 75 100 125 150 T J - Temperature (°C) I D = 250 μA 102 107 112 117 122 127 - 50 - 25 0 25 50 75 100 125 150 T J - Temperature (°C) I D = 250 μA 0 5 10 15 20 0 25 50 75 100 125 150 T C - Case Temperature (°C) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw P4410LVG 4 |
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