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P4410LVG データシート(PDF) 2 Page - VBsemi Electronics Co.,Ltd

部品番号. P4410LVG
部品情報  N-Channel 60 V (D-S) MOSFET
ダウンロード  8 Pages
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メーカー  VBSEMI [VBsemi Electronics Co.,Ltd]
ホームページ  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

P4410LVG Datasheet(HTML) 2 Page - VBsemi Electronics Co.,Ltd

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Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
60
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
1.0
3.0
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 250
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, V GS = 0 V
1
µA
VDS = 60 V, V GS = 0 V, TJ = 125 °C
50
VDS = 60 V, V GS = 0 V, TJ = 150 °C
250
On-State Drain Currenta
ID(on)
VDS 10 V, VGS = 10 V
20
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 6.6 A
0.073
VGS = 4.5 V, ID = 6 A
0.083
Forward Transconductancea
gfs
VDS = 15 V, ID = 6.6 A
25
S
Dynamicb
Input Capacitance
Ciss
VDS = 30 V, VGS = 0 V, f = 1 MHz
860
pF
Output Capacitance
Coss
85
Reverse Transfer Capacitance
Crss
40
Total Gate Chargec
Qg
VDS = 30 V, VGS = 10 V, ID = 6.6 A
19.8
30
nC
Gate-Source Chargec
Qgs
3.6
Gate-Drain Chargec
Qgd
4.1
Gate Resistance
Rg
f = 1 MHz
0.4
2
4
Turn-On Delay Timec
td(on)
VDD = 30 V, RL = 9.6 
ID  5.2 A, VGEN = 10 V, Rg = 1 
816
ns
Rise Timec
tr
11
20
Turn-Off Delay Timec
td(off)
18
27
Fall Timec
tf
510
Turn-On Delay Timec
td(on)
VDD = 30 V, RL = 9.6 
ID  5.2 A, VGEN = 4.5 V, Rg = 1 
38
57
Rise Timec
tr
58
87
Turn-Off Delay Timec
td(off)
18
27
Fall Timec
tf
816
Drain-Source Body Diode Ratings and Characteristicsb TC = 25 °C
Continuous Current
IS
16.9
A
Pulsed Current
ISM
25
Forward Voltagea
VSD
IF = 5.2 A, VGS = 0 V
0.8
1.5
V
Reverse Recovery Time
trr
IF = 5.2 A, dI/dt = 100 A/µs
34
51
ns
Peak Reverse Recovery Current
IRM(REC)
35
A
Reverse Recovery Charge
Qrr
50
75
nC
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
P4410LVG
2


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