 |
データシートサーチシステム |
|
|
データシートサーチシステム |
|
P4410LVG データシート(PDF) 3 Page - VBsemi Electronics Co.,Ltd |
|
||||||||||||||||||||||||||||||
P4410LVG Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd |
|
|
3 / 8 page 
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics Transfer Characteristics Transconductance 0 5 10 15 20 25 0 0.5 1 1.5 2 V DS - Drain-to-Source Voltage (V) V GS = 10 V thru 7 V V GS = 3 V V GS = 4 V 0 1 2 3 4 5 0 1 2 3 4 V GS - Gate-to-Source Voltage (V) T C = 25 °C T C = 125 °C T C = - 55 °C 0 10 20 30 40 0 3 6 9 12 I D - Drain Current (A) T C = 25 °C T C = 125 °C T C = - 55 °C On-Resistance vs. Drain Current On-Resistance vs. Gate-to-Source Voltage Gate Charge 0.04 0.06 0.07 0.08 0.09 0.10 0 5 10 15 20 25 I D - Drain Current (A) V GS =4.5V V GS = 10 V 0.03 0.06 0.09 0.12 0.15 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 6.6 A 0 2 4 6 8 10 0 6 12 18 24 Q g - Total Gate Charge (nC) V DS = 40 V V DS = 15 V V DS = 30 V I D = 6.6 A E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw P4410LVG 3 |
|
Japanese ▼ 
English
Chinese
German
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
