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データシートサーチシステム |
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データシートサーチシステム |
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FTK04N15T データシート(PDF) 1 Page - First Silicon Co., Ltd |
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FTK04N15T Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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2016. 05. 10 1/4 SEMICONDUCTOR TECHNICAL DATA FTK04N15T Revision No : 0 N-Channel Power MOSFET GENERAL DESCRIPTION This FTK04N15T use advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURE High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Excellent package for good heat dissipation Maximum ratings (Ta=25℃ unless other wise oted) Parameter Symbol Value Unit Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 4 Pulsed Drain Current(note1) IDM 16 A Thermal Resistance from Junction to Ambient RθJA 125 ℃/W JunctionTemperature TJ 150 Maximum lead temperure for soldering purposes , 1/8”from case for 5 seconds TL 260 ℃ MARKING T04N15= Device code EQUIVALENT CIRCUIT V(BR)DSS RDS(on)MAX ID 150V 4A 160mΩ@10V SOT-223 1. GATE 2. DRAIN 3. SOURCE 1 2 3 T04N15 151 Storage Temperature Range TSTG -55~+150 151=Code |
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