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データシートサーチシステム |
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データシートサーチシステム |
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FTK04N15T データシート(PDF) 2 Page - First Silicon Co., Ltd |
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FTK04N15T Datasheet(HTML) 2 Page - First Silicon Co., Ltd |
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2 / 4 page 
2016.05. 10 2/4 FTK04N15T Revision No : 0 Electrical characteristics (Ta=25 ℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 150 Drain-source diode forward voltage(note2) SD VGS = 0V, IS = 2.0A 1.2 V Zero gate voltage drain current IDSS VDS =150V, VGS =0V 1 µA Gate-body leakage current (note2) IGSS VDS =0V, VGS =±20V ± 100 nA On characteristics (n ote2) Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 1.5 2.0 2.5 V Static drain-source on-resistance RDS(on) VGS =10V, ID=4.0A 130 160 mΩ Forward transconductance gfs VDS =15V, ID =4A 5 S Dynamic characteristics (note 3) Input capacitanc e Ciss 900 Output capacitance Coss 115 Reverse transfer capacitance Crss VDS =25V,VGS =0V,f =1MHz 70 pF Switching characteristics (note 3) Total gate charge Qg 19 Gate-source charge Qgs 5.5 Gate-drain charge Qgd VDS =75V,VGS =10V,I D =1.5A 7 nC Turn-on delay time (note3) td (on) 8 Turn-on rise time (note3) tr 10 Turn-off delay time (note3) td(off) 20 Turn-off fall time (note3) tf VDS=75V, VGS=10V, RG=6Ω, ID =1.0A,RL=75Ω 15 ns Notes : 1. Repetitive Rating:Pulse width limited by maximum junction temperature. 2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. 3. These parameters have no way to verify. V |
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