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FTK04N15T データシート(PDF) 2 Page - First Silicon Co., Ltd

部品番号. FTK04N15T
部品情報  N -Channel Power MOSFET
ダウンロード  4 Pages
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メーカー  FS [First Silicon Co., Ltd]
ホームページ  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK04N15T Datasheet(HTML) 2 Page - First Silicon Co., Ltd

  FTK04N15T データシート HTML 1Page - First Silicon Co., Ltd FTK04N15T データシート HTML 2Page - First Silicon Co., Ltd FTK04N15T データシート HTML 3Page - First Silicon Co., Ltd FTK04N15T データシート HTML 4Page - First Silicon Co., Ltd  
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2016.05. 10
2/4
FTK04N15T
Revision No : 0
Electrical characteristics (Ta=25
℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Off characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =250µA
150
Drain-source diode forward voltage(note2)
SD
VGS = 0V, IS = 2.0A
1.2
V
Zero gate voltage drain current
IDSS
VDS =150V, VGS =0V
1
µA
Gate-body leakage current (note2)
IGSS
VDS =0V, VGS =±20V
±
100
nA
On characteristics (n ote2)
Gate-threshold voltage
VGS(th)
VDS =VGS, ID =250µA
1.5
2.0
2.5
V
Static drain-source on-resistance
RDS(on)
VGS =10V, ID=4.0A
130
160
mΩ
Forward transconductance
gfs
VDS =15V, ID =4A
5
S
Dynamic characteristics (note 3)
Input capacitanc
e
Ciss
900
Output capacitance
Coss
115
Reverse transfer capacitance
Crss
VDS =25V,VGS =0V,f =1MHz
70
pF
Switching characteristics (note 3)
Total gate charge
Qg
19
Gate-source charge
Qgs
5.5
Gate-drain charge
Qgd
VDS =75V,VGS =10V,I D =1.5A
7
nC
Turn-on delay time (note3)
td (on)
8
Turn-on rise time (note3)
tr
10
Turn-off delay time (note3)
td(off)
20
Turn-off fall time (note3)
tf
VDS=75V, VGS=10V,
RG=6Ω, ID =1.0A,RL=75Ω
15
ns
Notes :
1.
Repetitive Rating:Pulse width limited by maximum junction temperature.
2.
Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
3.
These parameters have no way to verify.
V


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