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データシートサーチシステム |
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データシートサーチシステム |
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FTK08DFN データシート(PDF) 1 Page - First Silicon Co., Ltd |
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FTK08DFN Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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2014. 10. 10 1/4 SEMICONDUCTOR TECHNICAL DATA FTK08DFN Revision No : 0 Dual P-Channel Power MOSFET General Description The FTK08DFN uses advanced trench technology and design to Provide excellent RDS(on) with low gate charge. This device is suitable for use in DC-DC conversion applications. FEATURE Low Profile for Easy Fit in Thin Environments Bidirectional Current Folw with Common Source Configuration APPLICATIONS Optimized for Battery and Load Management Applications in Portable Equipment Li-Ion Battery Charging and Protection Circuits High Power Management in Portable , Battery Powered Products High Side Load Switch MARKING: Tape Drawing (Unit : mm) Maximum ratings (Ta=25 ℃ unless otherwise noted) t i n U e u l a V l o b m y S r e t e m a r a P V e g a t l o V e c r u o S - n i a r D DS -20 V e g a t l o V e c r u o S - e t a G GS ±8 V I ) a 1 e t o N ( t n e r r u C n i a r D s u o u n i t n o C D A -3.6 Power Dissipation(Note1a) PD W 4 . 1 Power Dissipation(Note1b) PD W 7 . 0 Thermal Resistance from Junction to Ambient(Note1a) RθJA 86 ℃/W DFNWB2*2-6L-A front back |
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